FIELD: engineering.
SUBSTANCE: present invention relates to the technology of manufacturing high-power integrated circuits. The proposed method is as follows: the GaN buffer layer located on a substrate is doped with carbon; insulating areas are formed along the edges of the transistor by implanting nitrogen ions; a passivating layer of silicon nitride is applied prior to the operation of ion implantation.
EFFECT: reduction in the leakage currents of gallium nitride HEMT transistors and integrated circuits based thereon to units nA at voltages of up to 600 V.
1 cl, 4 dwg
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