METHOD FOR GOLD AND COBALT ALLOYING ADDITIVES DETERMINATION IN SEMICONDUCTOR MATERIALS BASED ON TIN DIOXIDE Russian patent published in 2018 - IPC G01N31/00 G01N1/28 

FIELD: chemistry.

SUBSTANCE: method involves treatment of a semiconductor material sample with a solution of HNO₃ and HCl acids, taken in a volume ratio of 1:3, and with ultrasound to transfer additives from the material surface to the solution, selection of a solution aliquot for subsequent determination of additives on the material surface, followed by material washing until supernatant components are removed and decomposed in an autoclave with a mixture of HNO₃, HCl, HF acids, taken in an amount dissolving the tin dioxide, the resulting solution is analyzed by inductively coupled plasma mass spectrometry to determine the additives concentration in the material volume.

EFFECT: increased accuracy and reliability of the analysis.

2 cl, 1 ex, 2 tbl