FIELD: technological processes.
SUBSTANCE: invention relates to a technology for the preparation of bismuth germanate Bi4Ge3O12, which can be used as a starting material for the cultivation of pure, defect-free single crystals, as well as in gamma spectroscopy, nuclear industry, in medicine, optoelectronics, high-energy physics. Method includes a preliminary mechanical mixing of the initial bismuth oxide powders Bi2O3 and germanium oxide GeO2, heating of the obtained mixture in a platinum crucible under a predetermined temperature, the obtained melt being pre-heat treated at a temperature of from 1,160±20 °C with an exposure of at least 15 minutes, then the melt is cooled to 1,060±10 °C…1,090±40 °C with isothermal holding in this temperature range for at least 15 minutes and then is cooled in the oven at a speed of no higher than 20 deg/min.
EFFECT: technical result is to increase the efficiency of the process by reducing the time and obtaining a single-phase Bi4Ge3O12.
1 cl, 4 dwg, 1 ex
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Authors
Dates
2018-05-23—Published
2017-10-05—Filed