FIELD: chemistry.
SUBSTANCE: invention relates to chemistry and can be used in the field of piestic- and optoelectronics. Method for producing Bi12SiO20 bismuth silicate. Method of casting involves preliminary mechanical mixing of the initial components of Bi2O3 and SiO2 and heating the resulting mixture in a platinum crucible to a predetermined temperature. Heating is carried out in the range 900–1,200 °C holding in this interval for at least 15 minutes, after which the resulting melt is poured onto a platinum substrate.
EFFECT: technical result is the production of bismuth silicate with the formula Bi12SiO20 without impurities and foreign impurities and shortening the synthesis time.
1 cl, 5 dwg, 1 ex
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