METHOD FOR DETERMINING TEMPERATURE OF PHASE TRANSITIONS IN FILMS AND HIDDEN LAYERS OF MULTI-LAYER STRUCTURES OF NANOMETER RANGE OF THICKNESSES Russian patent published in 2018 - IPC G01N23/20 G01N25/12 

FIELD: measuring equipment.

SUBSTANCE: method for determining the temperature of phase transitions in films and hidden layers of multi-layer structures of nanometer range of thicknesses, a heated sample is irradiated with a flow of outgoing x-ray source, and the radiation reflected from the surface of the sample is recorded. According to the claimed invention, controlled heating of the sample is carried out, the heated sample is irradiated with a parallel beam of x-ray radiation under the critical angle of total external reflection, the radiation refracted by the sample is transmitted to a multi-reflection crystal-analyzer, and the beam reflected by the multi-reflection crystal analyzer is recorded by a detector. According to step-like change of intensity of refracted x-rays, the temperature of change of film material density is recorded at phase transition. In addition, the parallel x-ray beam is formed using a multi-reflection monochromator, which together with the multi-reflection crystal analyzer forms a circuit of a non-dispersive single-crystal spectrometer for recording small changes of critical angle Θc.

EFFECT: increased determination accuracy of the melting point of films and individual layers of multi-layer structures of nanometer range of thicknesses in any combinations of film materials and substrates irrespective of their structure and transparency for optical radiation.

2 cl, 1 dwg