METHOD FOR STRUCTURAL INSPECTION OF SEMICONDUCTOR MULTILAYER STRUCTURE (VARIANTS) Russian patent published in 2012 - IPC G01N23/207 

FIELD: structural diagnostics.

SUBSTANCE: sample is scanned in the context of the Bragg reflection with the use of Ω-method in the roentgen diffractometry single-step mode, furthermore, for multilayer structures with heterogeneous composition AlGaN/GaN with nanometric layers the roentgen single-crystal diffractometry is used with the power of 5-15 W and heterochromatic quasiparallel X-ray beam and a position-sensitive detector with an angular width of 10°-15°. At first the X-ray tube is fixed in the position of Bragg reflection for the crystallographic plane (0002) of the layer GaNm the samples are scanned via inclining the X-ray tube in the angular range lying on the left and on the right from the main diffraction maximum (0002) of the GaN layer and including all diffraction maximums of Al_xGa_(1-x)N/GaN structures, where x ranges from 0,1 to 0,9, and the single-step scanning is carried out by setting the X-ray tube consequently in several angular positions which correspond to the maximum reflection of each minor peak point, while recording the diffractogram with the same exposition for all minor peak points, and the exposition time ranges from 30 to 100 seconds.

EFFECT: resolution of interference peaks corresponding to separate nanometric layers of semiconductor structures; use of low-capacity devices becomes possible.

3 cl, 3 tbl, 6 dwg