METHOD FOR FORMATION OF PLANAR STRUCTURES BY THE METHOD OF ATOMIC-POWER LITHOGRAPHY Russian patent published in 2018 - IPC G06K1/00 B82B1/00 

FIELD: electrical engineering.

SUBSTANCE: usage in order to create planar structures. Essence of the invention lies in the fact that the method of forming planar silver structures on the surface of silicon wafers involves the deposition of metal particles, which occurs due to the local dissociation of the silver salt induced by means of applying the negative potential difference between the conductive needle of the atomic force microscope and the surface of the sample, the surface of the silicon wafer is first cleaned and saturated with silver salts, and then placed on the electrically conductive substrate, the AFM needle moves at the frequency from 0.16 up to 1.12 Hz at the potential difference from -7 up to -12 V, at the room temperature and normal humidity, which allows to form the relief with the topology of the specified trajectory of the needle with the width from 40 up to 200 nm, the height from 2 up to 40 nm.

EFFECT: providing the possibility of forming the relief from silver clusters with controlled morphology on the surface of silicon wafers.

1 cl, 4 dwg