METHOD FOR DETERMINING RESIDUAL INHOMOGENEOUS STRESSES IN ANISOTROPIC ELECTROTECHNICAL MATERIALS BY MEANS OF X-RAY METHOD Russian patent published in 2018 - IPC G01N23/20 

FIELD: measurement technology.

SUBSTANCE: using for the determination of residual nonuniform stresses in polycrystalline anisotropic electrotechnical materials with the X-ray method. Essence of the invention is in the fact that the determination of residual nonuniform stresses in polycrystalline anisotropic electrotechnical materials according to the X-ray method is carried out on the surface of the controlled sample, the direction for the subsequent determination of residual stresses in a given crystallographic plane {hkl} is selected according to the reflections of those planes, the projections of the normals, which are closest to the selected direction. Thin transparent plate is placed on the surface of the controlled sample parallel to the selected direction and the crystallographic plane, on this plate the number of thin metal rods with the diameter of 0.1–0.07 mm are fixed parallel to each other at the distance of 1.0–0.8 mm between them, and it is exposed to the beam of characteristic K_α1 X-ray radiation, the sample is continuously scanned as it rotates alongthe axis, in this case, the diffraction topogram is obtained and recorded, from which the absence or presence of distortions of the crystal structure in the form of transverse tensions, compressions, plane shifts, represented in the changes of X-ray reflections from metal rods, is detected, the form and magnitude of local inhomogeneous stresses and grain sites or their absence in the crystal lattice of electrical materials are determined.

EFFECT: ensuring the ability to reliably and accurately detect and determine the physical parameters of local inhomogeneities of the crystal structure and residual nonuniform stresses in anisotropic electrotechnical materials.

1 cl, 2 dwg