SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract RU 2061278 C1

FIELD: semiconductor engineering; manufacture of Schottky-barrier field-effect transistors with mushroom-shaped gate. SUBSTANCE: barrier layer of gate is formed by explosion method. Gate is built up by deposition of separating metals and gold from electrolyte while intensively illuminating the plate. Vanadium and nickel layers are evaporated in thickness of and . EFFECT: facilitated procedure.

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RU 2 061 278 C1

Authors

Samsonenko Boris Nikolaevich

Strel'Tsov Vadim Stanislavovich

Dates

1996-05-27—Published

1993-03-15—Filed