METHOD FOR MANUFACTURING INFRARED LIGHT EMITTING DIODE Russian patent published in 2023 - IPC H01L33/10 H01L33/30 

FIELD: electronic engineering.

SUBSTANCE: invention relates to electronic engineering and can be used in the electronics industry to convert electrical energy into light. A method for manufacturing an infrared light-emitting diode includes successively forming a multilayer light-emitting AlGaAs/GaAs heterostructure on a GaAs substrate, a first electrode, a metal reflector, and a carrier substrate by electrochemical growth of chromium or iridium on the surface of a metal reflector, removing the GaAs growth substrate, forming a light-extracting surface and a second electrode on open surface of the heterostructure. A metal carrier substrate is formed by monolithic electrochemical growth of chromium or iridium on the surface of a heterostructure with a metal reflector.

EFFECT: method ensures the manufacture of a light emitting diode with reduced ohmic losses.

3 cl, 3 dwg