METHOD FOR PRODUCING SHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS FOR SUPERLARGE-SCALE ARSENIDE GALLIUM INTEGRATED CIRCUITS OF STORAGE DEVICES Russian patent published in 1996 - IPC

FIELD: semiconductor electronics; production of superlarge-scale GaAs integrated circuits. SUBSTANCE: grooves are formed for gate regions of normally closed transistors by thermal oxidation of epitaxial-layer regions through cuts in mask at points of expected location of grooves through desired depth in dry oxygen environment at 400-600 C for 5-20 min followed by removal of oxide by annealing the structure in hydrogen environment at 600-700 C for 10-40 min. Annealing may be also made in hydrogen-arsenium mixture environment at their relative flow rates of 40:(1-4). Method provides for 40-90% higher yield. EFFECT: improved yield due to higher accuracy of setting transistor threshold voltages through influencing the degree of nonstoicheometry of gallium arsenide surface layer. 2 cl, 1 dwg, 3 tbl