SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 1995 - IPC

Abstract RU 2029413 C1

FIELD: microelectronics. SUBSTANCE: semiconductor devices are manufactured on gallium arsenide plate with active structure by formation of mesa structure, formation of silicon dioxide mask by anodic oxidation, removal of silicon dioxide mask by chemical plasma etching, annealing of anodic oxide protective mask, formation of contact to plate rear side, and deposition of resistive contacts from electrolyte while additionally illuminating the plate. EFFECT: improved quality of resistive contacts. 5 dwg

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RU 2 029 413 C1

Authors

Samsonenko B.N.

Narnov B.A.

Ivanov L.A.

Dates

1995-02-20—Published

1992-05-27—Filed