MICROWAVE ATTENUATOR Russian patent published in 2018 - IPC H01P1/22 

FIELD: radio engineering, communication.

SUBSTANCE: invention can be used for established attenuation of a microwave signal of high power in a wide band of operating frequencies. Microwave attenuator contains N has successively connected cascades, performed on planar film resistors, total area which provides a specified input power dissipation of the high-frequency signal, and the values of the coefficients transfer each stage ensures a uniform distribution of the radiated in them. All cascades are made in the form of a T-shaped structure and are located on a common dielectric substrate. All T-shaped structures of the area of each film resistor is proportional to the power on it is wasted and extreme width of film resistors is greater than the width of the average film resistor, and extreme film resistors adjacent t-shape structures merged into one common film resistor, square and resistance which are equal to the sum of squares and the sum of the resistances, respectively the united film resistors.

EFFECT: simplification of design due to the fact that all film resistors are located on a dielectric substrate and not matching elements, the persistence of high input power level of the high-frequency signal by choosing the square each film resistor is proportional to the power on it is wasted.

5 dwg, 3 tbl