SCANNING DRIVE CIRCUIT FOR OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR Russian patent published in 2018 - IPC G09G3/36 G11C19/18 

Abstract RU 2667457 C1

FIELD: images forming devices.

SUBSTANCE: invention relates to the field of liquid crystal displays. Technical result is achieved by plurality of cascade-connected GOA units and jointly used auxiliary inverter. Each of GOA units includes major inverter. Auxiliary inverter is electrically connected to each major inverter to form corresponding parts of undervoltage hold for respective GOA units.

EFFECT: technical result consists in reducing power consumption of scan excitation circuit for oxide semiconductor thin-film transistor.

15 cl, 5 dwg

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RU 2 667 457 C1

Authors

Daj Chao

Dates

2018-09-19Published

2015-01-12Filed