FIELD: process engineering.
SUBSTANCE: invention relates to plant, reactor and continuous production of high-purity silicon tetrachloride or germanium tetrachloride by treating silicon tetrachloride or germanium tetrachloride contaminated by, at least, one hydrogen-containing compound with the help of cold plasma and differential distillation of treated phase. Treatment if carried out in plasma reactor 4 wherein lengthwise axes of dielectric 4.4, high-voltage electrode 4.3 and earthed metal heat exchanger 4.2 are directed parallel each other and, at the same time, with gravity vector.
EFFECT: higher efficiency of purification.
25 cl, 2 dwg, 1 ex
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR PRODUCING HIGH-PURITY SILICON TETRACHLORIDE | 2017 |
|
RU2672428C1 |
| METHOD OF PRODUCING HIGH-PURITY MONOSILANE AND SILICON TETRACHLORIDE | 2011 |
|
RU2457178C1 |
| METHOD OF PRODUCING HIGHER SILANES | 2007 |
|
RU2470859C2 |
| METHOD OF PRODUCING RARE REFRACTORY METALS, SILICON AND THEIR COMPOUNDS | 1999 |
|
RU2153016C1 |
| METHOD OF PRODUCTION OF HIGH-PURITY TRICHLOROSILANE AND DEVICE FOR REALIZATION OF THIS METHOD | 1998 |
|
RU2142909C1 |
| METHOD OF PRODUCING TRICHLOROSILANE THROUGH CATALYTIC HYDRODEHALOGENATION OF SILICON TETRACHLORIDE | 2005 |
|
RU2371387C2 |
| METHOD OF PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON | 2018 |
|
RU2739312C2 |
| METHOD OF OBTAINING ISOTOPRICATED SILICON TETRACHLORIDE | 2016 |
|
RU2618265C1 |
| HIGH-PURITY POWDER SILICON DIOXIDE AND METHOD AND DEVICE FOR PRODUCTION OF SILICON DIOXIDE | 2003 |
|
RU2295492C2 |
| METHOD FOR PRODUCING ISOTOPICALLY ENRICHED GERMANIUM TETRACHLORIDE | 2022 |
|
RU2792381C1 |
