FIELD: instrument engineering.
SUBSTANCE: thin film transistor (100) comprises gate (10), source (30), and drain (50). Source and drain are located parallel to the gate. Source comprises first end (32). Drain comprises second end (52). First end is opposite the second end. Channel (70) is formed between the first end and the second end. First end and the second end are non-linear.
EFFECT: channel dimension in the directions of the extension of the first end and the second end is the width of the channel, and in the direction of the channel width, the channel gradually decreases and narrows from the middle to the two ends so as to ensure matching of the optical energy received at the two ends of the channel with the optical energy received in the middle of the channel during the exposure process.
12 cl, 4 dwg
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