FIELD: chemistry.
SUBSTANCE: invention relates to thin metal-oxide films used to make a field-effect transistor. A coating liquid for forming a thin metal oxide film includes an inorganic indium compound, at least one of an inorganic magnesium compound and an inorganic zinc compound, glycolic ether and a diol, wherein the diol is selected from at least one of diethylene glycol, 1,2-propanediol and 1,3-butanediol.
EFFECT: invention enables to obtain a thin-film metal oxide coating with the required resistivity using a simple method, a large area, the required shape and with high accuracy.
12 cl, 10 dwg, 4 tbl
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