THIN-FILM TRANSISTOR, GATE TRIGGER ON MATRIX AND DISPLAY DEVICE CONTAINING THEREOF, AND METHOD FOR MANUFACTURE THEREOF Russian patent published in 2019 - IPC H01L29/786 H01L21/18 

FIELD: chemistry.

SUBSTANCE: invention discloses a thin-film transistor, comprising a base substrate, an active layer on a base substrate, comprising a first semiconductor region, a second semiconductor region and a plurality of semiconductor bridges, each of which connects a first semiconductor region and a second semiconductor region, wherein said plurality of semiconductor bridges are spaced from each other, wherein said active layer is made of material containing M1O_aN_b, wherein M1 is one metal or combination of metals, a > 0 and b ≥ 0, etching stop layer on side of active layer, far from base substrate, wherein the first semiconductor region comprises a first non-overlapping portion, a projection of which is outside the projection of the etching stop layer on the top view of the base substrate, and the second semiconductor region comprises a second non-overlapping portion, a projection of which is outside the projection of the etching stop layer on the top view of the base substrate, the first electrode on the side of the first non-overlapping section, far to the base substrate, and the second electrode on the side of the second non-overlapping section, far to the base substrate.

EFFECT: invention provides high density of carriers and high mobility.

18 cl, 8 dwg