SEMICONDUCTOR DEVICE Russian patent published in 2013 - IPC H01L27/02 

FIELD: electricity.

SUBSTANCE: semiconductive device contains a circuit including variety of thin-film transistors and at least one diode; at that variety of thin-film transistors have the same type of conductivity. When conductivity type for variety of thin-film transistors is N-type, electrode at cathode side of the diode is connected to the line connected to the gate of one transistor selected from variety of thin-film transistors and when conductivity type for variety of thin-film transistors is P-type, electrode at anode side of the diode is connected to the line connected to the gate of one transistor selected from variety of thin-film transistors. The device contains another diode no formed in the line but arrange so that direction of current through it opposite to at least to one diode. The circuit includes shift register with variety of cascades. Each cascade in the variety includes the first transistor to transfer an output signal and variety of second transistors which source area or discharge area is connected electrically to gate electrode of the first transistor.

EFFECT: invention allows excluding damage of thin-film transistors from electrostatic discharge in scaled-down circuit.

36 dwg, 1 tbl