FIELD: electrical engineering.
SUBSTANCE: present invention relates to obtaining semiconductor materials, particularly to photosensitive lead selenide films, used for making infrared photodetectors in the 1-5 mcm range. The method of making chemically deposited lead selenide films sensitive to infrared radiation involves heating the films in atmospheric air in a sealed container. Thermal treatment is done at ratio of volume of the container to the surface area of the treated film equal to 20-40. Heating is done in the presence of selenium powder.
EFFECT: design of a method of making chemically deposited PbSe films sensitive to infrared radiation, providing for maximum values of voltage sensitivity and detectivity for use without cooling or light cooling.
3 tbl
| Title | Year | Author | Number |
|---|---|---|---|
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|
RU2745015C2 |
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|
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|
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| METHOD OF CHEMICAL DEPOSITION OF SEMICONDUCTOR FILMS FROM CHALCOGENIDES OF METALS | 1990 |
|
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| INFRARED MULTISPECTRAL RADIATION DETECTOR | 2013 |
|
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| METHOD OF PRODUCING PHOTOSENSITIVE LEAD SULPHIDE FILMS | 2024 |
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| METHOD FOR OBTAINING PHOTOSENSITIVE LEAD SULPHIDE FILMS | 2023 |
|
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| TANDEM- STRUCTURE OF TWO-CHANNEL INFRARED RADIATION DETECTOR | 2016 |
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RU2642181C2 |
