FIELD: electronics.
SUBSTANCE: invention refers to the field of microelectronics. Creating a symmetrical multiplexer for complementary metal-oxide-semiconductor (CMOS) transistors, having two signal inputs, one control input, one output and made in form of element of standard digital elements (SDE) library, with higher quality of signal switching, due to higher degree of identity of delays of signals propagation from signal inputs to output, due to symmetry of topological layers, which provides identity of parasitic capacitances and resistances and their location in identical electric modes; due to installation of additional buffer cascades at control input of multiplexer, in order to ensure independence of propagation delays of signals from driver control driver parameters; as well as due to increased size of transistors, in order to reduce the effect of local on-chip variations on identity of propagation delays.
EFFECT: design of a symmetrical multiplexer on complementary metal-oxide-semiconductor transistors.
1 cl, 6 dwg
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