TERNARY INVERTER ON CMOS TRANSISTORS Russian patent published in 2009 - IPC H03K19/20 H03K19/948 

Abstract RU 2373639 C1

FIELD: radio engineering.

SUBSTANCE: invention is related to digital equipment and may be used to perform logical function of inversion in ternary devices. Ternary inverter consists of inverting circuits (1)-(4), trigger circuits (5) and (6), complementary keys (7)-(10) on the basis of MOS transistors. Inlet is represented by inlets of circuits (1) and (2). Each inverting circuit comprises complementary pairs of transistors, gates and drains of which are joined in pairs. Each trigger circuit consists of two components on the basis of complementary pair of transistors. Inverting circuits, trigger circuits and complementary keys are connected such as specified in invention formula. With specified logical condition at the inlet, keys are closed so that voltage at the outlet complies with required value of ternary code. In case of any logical condition at the outlet, through static current flow becomes impossible due to availability of transistors in cutoff mode.

EFFECT: reduced static consumed power due to reduction of static current values down to values specified by leakage currents of MOS transistors.

5 dwg; 2 tbl

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RU 2 373 639 C1

Authors

Morozov Dmitrij Valer'Evich

Pilipko Mikhail Mikhajlovich

Korotkov Aleksandr Stanislavovich

Dates

2009-11-20Published

2008-04-23Filed