METHOD OF EPITAXIAL GROWTH OF SEMICONDUCTOR SOLID SOLUTIONS Russian patent published in 1996 - IPC

FIELD: semiconductor technology. SUBSTANCE: invention may be used in manufacture of device structures for micro- and optoelectronics with the use of liquid epitaxy. First saturated solution melt of arsenic in tin is prepared and applied by thin layer on surface of silicon substrate at first temperature. Then saturated solution-melt of arsenic in gallium with higher temperature is deposited over surface of first melt in layer of same thickness. Substrate is first partially solved in tin melt with subsequent transition to crystallization of epitaxial layer enriched with silicon. Realization conditions are such that great arsenic over saturation is created that is why content of gallium arsenide in crystallizing layer of solid solution grows fast and on surface it approaches to pure gallium arsenide. EFFECT: production of continuous row of solid solutions (Si₂)_xGaAs_1-x on silicon substrate.