METHOD OF OBTAINING LASER RADIATION ON QUANTUM DOTS AND APPARATUS THEREFOR Russian patent published in 2015 - IPC H01L21/20 H01S5/343 

FIELD: physics, optics.

SUBSTANCE: invention can be used to produce light-emitting structures on quantum dots. The method comprises growing, layer by layer on a GaAs substrate by molecular-beam epitaxy, a GaAs buffer layer, a lower layer of superlattice structures based on AlGaAs/GaAs compounds, a GaAs waveguide layer comprising an active region based on InAs quantum dots and InAs quantum wells, which covers the GaAs layer, an upper layer of superlattice structures based on AlGaAs/GaAs and a GaAs upper contact layer; in the active region, the layer of quantum dots is grown at a rate of not more than 0.03 nm/s, in arsenic and indium streams with stream density ratio of (10-12):1 and subsequently holding the layer of quantum dots in a stream of pure arsenic for 1 min to increase uniformity of quantum dots on the height.

EFFECT: improved operating efficiency, designing a more efficient laser emitter and using one layer of quantum dots.

2 cl, 5 dwg