METHOD OF FORMING LOW-DENSITY QUANTUM DOT ARRAYS Russian patent published in 2025 - IPC B82B1/00 

FIELD: electronics; optoelectronics.

SUBSTANCE: method of forming low-density quantum dot arrays, which comprises forming, on the surface of a GaAs semiconductor substrate, a low-density array of symmetric nanoscale cavities in the form of an inverse pyramid by controlled thermal decomposition of the surface with subsequent deposition of a thin buffer layer of wide-band gap semiconductor GaAs, then, material of InAs quantum dots of subcritical depth is deposited on semiconductor substrate surface to selectively form low-density quantum dots in nano-sized recesses.

EFFECT: low density and high selectivity of formation of an array of InAs quantum dots on the surface of a semiconductor substrate.

1 cl, 3 dwg