FIELD: physics.
SUBSTANCE: invention relates to investigation of optical characteristics of semiconductor materials exposed to a temperature field and can be used in research activities. Essence of the proposed invention consists in the fact that the process of measuring optical characteristics of semiconductor materials is carried out at varying temperatures of the analysed material with an interval set directly for each specific study, id est with the possibility of controlling the level of temperature action on the analysed sample in a wide range, which enables high-accuracy determination of the optical characteristics of the material and their dependence on temperature change.
EFFECT: high information content of studying temperature dependences of optical characteristics of semiconductor materials.
1 cl, 1 dwg
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