USING AT LEAST ONE BINARY COMPOUND OF GROUP ELEMENT 15, 13/15 OF SEMICONDUCTOR LAYER AND BINARY COMPOUNDS OF ELEMENT OF GROUP 15 Russian patent published in 2019 - IPC C07F9/28 C07F9/50 C07F9/72 C23C16/30 

FIELD: chemistry.

SUBSTANCE: invention relates to use of at least one binary compound of group 15 element as an educt in a deposition method from a vapour phase. Binary compound of group 15 element is described by general formula R¹R²E-E'R³R⁴ (I), in which R¹ and R² independently selected from a group comprising an alkyl radical (C₁-C₁₀), R³= R⁴= H and E and E' are independently selected from a group comprising N, P, As and Bi, in which E = E' or E ≠ E', and in which hydrazine and derivatives thereof are excluded from said use, and/or binary compound of group 15 element is described by general formula R⁵E(E'R⁶R⁷)₂ (II), in which R⁵, R⁶ and R⁷ are independently selected from a group comprising H, an alkyl radical (C₁-C₁₀), and E and E' are independently selected from a group comprising N, P, As and Bi, in which E = E' or E ≠ E'.

EFFECT: binary compounds of group 15 element ensure implementation of reproducible production and/or deposition of multicomponent, homogeneous and ultrapure semiconductors of certain combination at relatively low used temperatures.

10 cl, 2 dwg, 11 ex