DIFFERENTIAL CASCADE ON COMPLEMENTARY JFET FIELD-EFFECT TRANSISTORS WITH HIGH ATTENUATION OF INPUT IN-PHASE SIGNAL Russian patent published in 2019 - IPC H03F1/00 H03F3/34 

Abstract RU 2710296 C1

FIELD: radio equipment.

SUBSTANCE: invention relates to the field of radio equipment. Disclosed is a differential cascade on complementary JFET field-effect transistors with high attenuation of the input in-phase signal, which comprises first (1) and second (2) inputs of the device, first (3) input field-effect transistor, first (4) current output of device, first (5) bus of power supply source, second (6) input field transistor, second (7) current output of device, third (8) input field transistor, third (9) current output of device, second (10) power supply bus, fourth (11) input field transistor, fourth (12) current output of device, first (13) additional field transistor, first (14) auxiliary two-terminal device.

EFFECT: creation of conditions, at which higher values of attenuation factor of input in-phase signals and noise suppression factor on power buses are provided.

1 cl, 12 dwg

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RU 2 710 296 C1

Authors

Prokopenko Nikolaj Nikolaevich

Zhuk Aleksej Andreevich

Bugakova Anna Vitalevna

Pakhomov Ilya Viktorovich

Dates

2019-12-25Published

2019-10-03Filed