DIFFERENTIAL AMPLIFIER ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION Russian patent published in 2019 - IPC H03F3/34 

FIELD: radio engineering and communications.

SUBSTANCE: invention relates to the field of radio engineering and communications and can be used as a device to amplify analog signals. Differential amplifier comprises field-effect transistor, gate of which is connected to first input of device, and drain is connected to first current output, matched with first bus of the power supply source, a second input field-effect transistor, gate of which is connected to the second input of the device, and drain is connected to the second current output of the device, matched with the first bus of the power supply source. Sources of the first and second input field-effect transistors are connected to each other through series-connected first and second additional resistors, sources of the third and fourth input field-effect transistors are connected to each other through series-connected third and fourth additional resistors.

EFFECT: high stability of static mode of input field-effect transistors at negative temperatures, possibility of varying limiting voltage of DA driving characteristic.

3 cl, 9 dwg