DIFFERENTIAL CASCADE OF AB CLASS WITH NONLINEAR PARALLEL CHANNEL Russian patent published in 2021 - IPC H03F3/34 

FIELD: radio equipment.

SUBSTANCE: invention relates to radio engineering and communication and can be used as an analogue signal amplification device, in the structure of analogue microchips of various functional purpose, for example, operational amplifiers (OA), comparators, etc., including those operating at low temperatures and exposure to radiation. Differential cascade of class AB with nonlinear parallel channel includes first (1) and second (2) inputs, first (3) and second (4) current outputs, third (6) and fourth (7) current outputs, first (9) input field transistor, gate of which is connected to first (1) input, and drain is connected to first (3) current output, second (10) input field transistor, gate of which is connected to second (2) input, and drain is connected to second (4) current output, third (11) input field transistor, drain of which is connected to third (6) current output, fourth (12) input field-effect transistor, drain of which is connected to fourth (7) current output, first (13) and second (14) current-stabilizing dipoles. Circuit includes first (15) and second (16) additional field-effect transistors, gate of first (15) additional field-effect transistor is connected to first (1) input, gate of second (16) additional field-effect transistor is connected to second (2) input, between sources of first (15) and second (16) additional field-effect transistors there connected in series are first (17) and second (18) auxiliary resistors, common node of which is connected to gates of third (11) and fourth (12) input field transistors, between the source of first (15) additional field transistor and second (8) bus of the power supply source, first (13) current-stabilizing bipolar is connected, between source of second (16) additional field transistor and second (8) power supply bus is connected second (14) current-stabilizing two-terminal device, source of third (11) input field-effect transistor is connected to the source of first (9) input field-effect transistor, and the source of fourth (12) input field-effect transistor is connected to the source of second (10) input field-effect transistor.

EFFECT: operation in class AB mode, id est increasing its maximum output voltage, as well as increasing its voltage of limiting passage characteristics (U_gr) in cryogenic temperatures and exposure to penetrating radiation.

4 cl, 9 dwg