FIELD: radio engineering.
SUBSTANCE: invention relates to the field of radio engineering. A differential stage based on complementary field-effect transistors is proposed, in which the third (10) and fourth (11) current outputs of the device are matched with the first (8) bus of the power source, the gate of the third (12) auxiliary field-effect transistor is connected to the combined sources of the third (5) and the fourth (6) input field-effect transistors, and its drain is matched with the second (16) bus of the power source, the source of the second (14) auxiliary field-effect transistor is connected to the combined sources of the third (5) and fourth (6) input field-effect transistors through the second (15 ) auxiliary resistor, the gate of the second (14) auxiliary field-effect transistor is connected to the combined sources of the first (3) and second (4) input field-effect transistors, and the drain of the second (14) auxiliary field-effect transistor is connected to the second (16) bus of the power supply.
EFFECT: high stability of the static mode of input transistors when exposed to negative temperatures.
1 cl, 7 dwg
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