FIELD: radio equipment.
SUBSTANCE: invention relates to radio engineering and communication and can be used as analogue signal amplification device, in structure of analogue microchips of various functional purpose, for example, operational amplifiers (OA), comparators, bridge power amplifiers, etc., incl. operating at low temperatures and exposure to radiation. Selection of additional resistors provides preset statistical mode for current in all field-effect transistors, which allows excluding traditional sources of reference current from DA circuit, which negatively affect these parameters during their construction.
EFFECT: technical result consists in creation of conditions, in which in the declared differential amplifier (DA) is provided, higher stability of static mode of the DA at negative temperatures and change of supply voltages, possibility of varying the throughput characteristic restriction voltage (Ugr) at developer's discretion (depending on preset SR values) at fixed static current consumption.
1 cl, 13 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DIFFERENTIAL CASCADE OF AB CLASS WITH NONLINEAR PARALLEL CHANNEL | 2020 |
|
RU2740306C1 |
| DIFFERENTIAL CASCADE OF AB CLASS ON COMPLEMENTARY FIELD TRANSISTORS WITH CONTROL P-N JUNCTION FOR OPERATION IN LOW TEMPERATURE CONDITIONS | 2019 |
|
RU2710847C1 |
| DIFFERENTIAL CASCADE ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION OF CLASS AB WITH VARIABLE VOLTAGE OF RESTRICTION OF PASS CHARACTERISTIC | 2019 |
|
RU2712414C1 |
| DIFFERENTIAL AMPLIFIER ON COMPLIMENTARY FIELD TRANSISTORS WITH CONTROLLED VOLTAGE LIMITATIONS OF PASSAGE CHARACTERISTICS | 2018 |
|
RU2679970C1 |
| DIFFERENTIAL AMPLIFIER ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION | 2018 |
|
RU2688225C1 |
| DIFFERENTIAL INPUT STAGE OF HIGH-SPEED OPERATIONAL AMPLIFIER FOR CMOS TECHNOLOGICAL PROCESSES | 2014 |
|
RU2566963C1 |
| DIFFERENTIAL AMPLIFIER BASED ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION | 2020 |
|
RU2736412C1 |
| INPUT DIFFERENTIAL CASCADE ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS FOR OPERATION AT LOW TEMPERATURES | 2019 |
|
RU2712416C1 |
| DIFFERENTIAL CASCADE ON COMPLEMENTARY JFET FIELD-EFFECT TRANSISTORS WITH HIGH ATTENUATION OF INPUT IN-PHASE SIGNAL | 2019 |
|
RU2710296C1 |
| DIFFERENTIAL AMPLIFIER OF CLASS AB ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION | 2020 |
|
RU2736549C1 |
