FIELD: radio engineering.
SUBSTANCE: invention relates to radio engineering and can be used as an analog signal amplification device. Differential cascade comprises first (1) and second (2) inputs of device, first (3) input field transistor, gate of which is connected to first (1) input of device, drain is connected to first (4) current output, and source is connected to source of second (5) input field transistor, gate of which is connected to second (2) input of device, and drain is connected to second (6) current output, wherein first (4) and second (6) current outputs are matched with first (7) by power supply bus, third (8) input field-effect transistor, the drain of which is connected to third (9) current output, and the source is connected to the source of fourth (10) input field-effect transistor, the drain of which is connected to fourth (11) current output, wherein third (9) and fourth (11) current outputs are matched with second (12) power supply bus.
EFFECT: technical result consists in creation of conditions, which allow differential cascades to operate in class "AB" mode with low static current consumption.
4 cl, 9 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| DIFFERENTIAL CASCADE OF AB CLASS WITH NONLINEAR PARALLEL CHANNEL | 2020 |
|
RU2740306C1 |
| DIFFERENTIAL CASCADE ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS | 2018 |
|
RU2684473C1 |
| DIFFERENTIAL CASCADE ON COMPLEMENTARY JFET FIELD-EFFECT TRANSISTORS WITH HIGH ATTENUATION OF INPUT IN-PHASE SIGNAL | 2019 |
|
RU2710296C1 |
| INPUT DIFFERENTIAL CASCADE ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS FOR OPERATION AT LOW TEMPERATURES | 2019 |
|
RU2712416C1 |
| OPERATIONAL AMPLIFIER CJFET INTERMEDIATE STAGE WITH PARAPHASE CURRENT OUTPUT | 2019 |
|
RU2712411C1 |
| LOW-TEMPERATURE TWO-STAGE OPERATIONAL AMPLIFIER WITH PARAPHASE OUTPUT ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION | 2020 |
|
RU2721942C1 |
| INTERMEDIATE CASCADE OF OPERATIONAL AMPLIFIER WITH PARAPHRASE OUTPUT ON COMPLEMENTARY FIELD TRANSISTORS WITH CONTROL P-N JUNCTION | 2019 |
|
RU2720555C1 |
| DIFFERENTIAL CASCADE ON COMPLEMENTARY FIELD-EFFECT TRANSISTORS WITH CONTROL P-N JUNCTION OF CLASS AB WITH VARIABLE VOLTAGE OF RESTRICTION OF PASS CHARACTERISTIC | 2019 |
|
RU2712414C1 |
| OPERATIONAL AMPLIFIER BASED ON WIDE-BAND SEMICONDUCTORS | 2023 |
|
RU2822157C1 |
| DIFFERENTIAL STAGE ON COMPLETE FIELD TRANSISTORS WITH INCREASED TEMPERATURE STABILITY OF THE STATIC MODE | 2020 |
|
RU2746888C1 |
