RESISTIVE MEMORY ELEMENT Russian patent published in 2020 - IPC G11C13/00 C01B32/182 

FIELD: computer equipment.

SUBSTANCE: invention relates to the computer equipment. Resistive memory element comprises a substrate, active layer on the substrate, two electroconductive electrodes in contact with the active layer, wherein the active layer is made in a film of polyvinyl alcohol with a layer of fluorinated graphene particles adjacent thereto, first electrode is made with possibility of contacting with polyvinyl alcohol film, and second electrode is with layer of fluorinated graphene particles, which are obtained from thermally expanded graphite, with fluorination to degree of 20 to 25 %, including said values, particles are formed with thickness of not more than 2 nm, adjacent to film of polyvinyl alcohol, thickness of which is not less than 70 nm, layer of particles of fluorinated graphene is formed with thickness not exceeding the value lying in range from 5 to 10 nm, with total thickness of not more than 120 nm.

EFFECT: technical result consists in increase in ratio of values of currents in open and closed states (I_on/I_off) with achievement of 4–6 orders.

4 cl, 4 dwg