FIELD: nanotechnology.
SUBSTANCE: invention relates to methods of controlling operation of memory devices based on resistive non-volatile memory, as well as devices for neuromorphic calculations, and can be used to develop optimal protocols for switching resistive memristor memory and microcircuits based on it. Method of switching memristor from state with low resistance to state with high resistance includes action on memristor of sequence of positive and negative rectangular voltage pulses, note here that digital synthesized white noise with amplitude and intensity of noise signal is added to pulse effect.
EFFECT: invention provides guaranteed switching of the memristor from a low-resistance state (LRS) to a high-resistance state (HRS) with preservation of long-term and stable ratio of currents in states of LRS and HRS, as well as stability of resistive switching parameters (reduced degradation of the device during switching), in addition, the proposed invention extends the current range of efficient techniques providing stable switching of the memristor.
1 cl, 7 dwg
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