ACTIVE LAYER OF MEMRISTOR Russian patent published in 2020 - IPC G11C14/00 H01L45/00 C01B32/194 C01G31/02 

FIELD: computer equipment.

SUBSTANCE: invention relates to information accumulation technology, to computer engineering, particularly to elements of resistive memory, and can be used in designing memory devices, for example, computers, microprocessors of electronic passports, electronic cards. Active layer of memristor contains fluorographene particles and particles of crystalline hydrate of vanadium oxide V₂O₅⋅nH₂O with n≤3. Fluorographene is fluorinated to extent of 30 % or more. Lateral dimension of fluorographene particles is from 20 to 100 nm, thickness of particles from 1 monolayer to 2 nm. Particle diameter of the crystalline hydrate of vanadium oxide ranges from 5 to 20 nm. Particles of crystalline hydrate of vanadium are encapsulated by fluorographene particles. Ratio of content of fluorographene to content of crystalline hydrate of vanadium oxide is taken from 0.5 to 0.7 wt%. Active layer has thickness of 40 to 70 nm.

EFFECT: active layer according to the invention provides higher ratio of currents in open and closed states (I_on/I_off), increased switching stability without signal changes, switching time achievement to nanosecond range.

1 cl, 7 dwg