METHOD OF ACTIVE LAYER PRODUCING FOR RESISTIVE MEMORY Russian patent published in 2016 - IPC G11C14/00 C01B31/04 B82B3/00 B82Y40/00 

FIELD: computer engineering.

SUBSTANCE: invention can be used in making computer memory components, microprocessors, electronic passports and cards. Natural purified graphite is ground, in produced powder solvent is intercalated, not leading to graphite chemical oxidation, but promoting graphite stratification, for example, dimethyl formamide or N-methylpyrrolidone. For graphite particles stratification produced mixture is treated with ultrasound and obtaining suspension with graphene content of 50 %. For graphene fluoridation introducing from 3 to 10 % of hydrofluoric acid and from 40 to 47 % of water, including said intervals values. Smaller amount of hydrofluoric acid corresponds to larger amount of water and vice versa. Performing graphene fluoridation to 50-80 % for 20-60 days, including said values. Then, forming FG active layer for resistive memory element, for this purpose fluorinated suspension is dropwise applied on Si substrate or in combination using spin coulter, distributing it to required layer thickness, dried and washed in water. In another embodiment, fluorinated suspension, first washed, and then dropwise applied on Si substrate or in combination using spin coulter, distributing it to required layer thickness, and dried.

EFFECT: invention enables maximum resistive effect stability.

4 cl, 2 dwg, 5 ex