METHOD OF GROWING DIAMOND LAYERS ON MONOCRYSTALLINE SILICON SUBSTRATE Russian patent published in 2020 - IPC C30B23/06 C30B29/04 C01B32/26 C30B30/02 C23C14/24 

FIELD: chemistry.

SUBSTANCE: invention relates to growing crystals and can be used to produce diamond layers of large area on monocrystalline silicon substrates. Method of growing diamond layers, including heating in vacuum medium in the temperature range from 910 °C to 1150 °C of diamond powder in graphite tray, above surface of which there is a plate of monocrystalline silicon, wherein the tray with the plate is placed in a gap between two parallel plates of carbon foil, heated by direct passage of alternating current, and the value of current in the upper plate is less than in the lower one. During heating of fine diamond powder in vacuum medium and in presence of external electric field on polished surface of substrate from monocrystalline silicon there is appearance of solid layer, which is diagnosed as diamond.

EFFECT: advantages of the technology are relatively low process temperature, high speed, low power consumption.

1 cl, 4 ex, 3 dwg