METHOD FOR CONTINUOUS GROWTH OF SEMICONDUCTOR DIAMOND FILMS Russian patent published in 2022 - IPC C30B23/06 C30B30/02 C30B29/04 C23C14/24 C23C14/06 C01B32/26 

FIELD: crystals growing.

SUBSTANCE: invention relates to the field of growing crystals and can be used to obtain large-area diamond films on silicon substrates. The method for continuous growth of semiconductor diamond films includes heating the diamond powder 5 in a graphite container in a vacuum environment with the deposition of a diamond film 8 on the silicon surface, while under the lower surface of the container, a graphite foil tape 3 with a preliminarily obtained layer of multicrystalline silicon is moved under the lower surface of the container by means of bobbins 2, 9, the bottom of the container is made in the form of a layer 7 of carbon fabric with twill weave welded to its edges, the diamond powder is heated to a temperature of 1050°С with a graphite heater 6, then a potential difference is created between the container body and the feed reel 2 with the mentioned tape 3, and the tape with the resulting diamond film 8 is wound on a receiving reel 9. When finely dispersed diamond powder is heated in a vacuum and in the presence of an external electric field, a solid layer appears on the surface of a substrate moving relative to the container containing the powder and containing a thin layer of multisilicon on graphite foil, which is diagnosed as diamond.

EFFECT: obtaining semiconducting films of coarse-grained diamond as part of the diamond-silicon-graphite structure, multiplying the total area of ​​the resulting material and providing ohmic back contact to the structure being grown.

1 cl, 3 dwg, 1 ex