FIELD: crystal growth.
SUBSTANCE: invention relates to the field of crystal growth and can be used to produce boron-doped diamond films on silicon substrates. The method involves heating diamond powder in a graphite boat, above the surface of which a silicon plate is placed, and the boat with the plate is placed in the gap between two parallel carbon foil plates heated by direct transmission of alternating electric current, and the current value in the upper plate is less than in the lower one, in a vacuum environment, while in a boat with diamond powder, boric acid isopropyl ether is then added, and the voltage is supplied through a thyristor block located at the input of the furnace transformer.
EFFECT: creation of a method for growing diamond films of acceptor type of conductivity with a value of electrical resistivity acceptable for further use in microelectronics technology.
1 cl, 3 dwg
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