FIELD: technological processes.
SUBSTANCE: invention relates to growing layers of nanocrystalline hexagonal silicon carbide (moissanite) and can be used in electronic industry. Method involves movement of tape of carbon foil in horizontal plane with supply of molten silicon to its surface in dynamic vacuum, speed of belt movement is set within 0.5–3.0 m/min, and after extraction of tape with grown layer it is cut into measuring strips, placed in furnace and heated in air to temperature of 1,050 °C for 8 hours, at that movement of carbon tape is periodically interrupted with step corresponding to width of heating zone for 3–5 minutes, and then resume again.
EFFECT: in the process of growing layers of silicon carbide of cubic modification on their surface during periodic isothermal exposures, a layer of nanocrystals of hexagonal silicon carbide (moissanite) is obtained at high rate at low synthesis temperature.
1 cl, 4 dwg, 1 ex
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