FIELD: chemistry.
SUBSTANCE: invention relates to the technology of producing monocrystalline SiC – a wide-gap semiconductor material used in power electronics and for making integrated microcircuits on its basis. Disclosed is a holder for fixing a seed SiC monocrystal plate in a crucible, made in the form of a graphite bushing, the inner hole of which has a conical shape with a taper value from 0.35 to 1.15, wherein D1 < d < D2, where D1, D2 are the smallest and largest diameters of the hole, d is the diameter of the seed monocrystal plate, wherein the inner surface of the sleeve is coated with an elastic soft material, the values of elastic moduli of which are less than those of the monocrystalline SiC.
EFFECT: reduced level of mechanical stresses and number of structural defects in growing monocrystalline ingots of silicon carbide in plate of seed monocrystal SiC during growth of monocrystalline ingot.
1 cl, 9 dwg, 1 tbl
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Authors
Dates
2025-04-23—Published
2024-05-22—Filed