METHOD FOR INDIRECT MEASUREMENT OF FAIL-SAFETY OF IRRADIATED TEST DIGITAL MICROCIRCUITS, WHICH ARE BUILT USING DIFFERENT METHODS OF PERMANENT ELEMENT-BY-ELEMENT REDUNDANCY, AND FUNCTIONAL STRUCTURE OF TEST MICROCHIP INTENDED FOR IMPLEMENTATION OF THIS METHOD Russian patent published in 2020 - IPC G06F11/07 

FIELD: electrical engineering.

SUBSTANCE: invention relates to methods for indirect measurement of fail-safety of irradiated digital test microchips, which are built using various methods of permanent element-by-element redundancy, and to test microcircuits for implementation of these measurement methods. Theoretical methods are used to calculate fault tolerance of microcircuits based on estimation of probability of failure of irradiated microcircuits "by area". Average operating time of the microchip is used until its failure from the moment of irradiation taken as the initial one until the moment of fixation of the number of successive failures of the irradiated microcircuit in a given number of adjacent cycles of operation of test microchips.

EFFECT: design of facilities for testing methods of constructing digital microcircuits based on continuous elementwise redundancy in order to obtain experimental estimates of their fault tolerance to radiation.

6 cl, 2 dwg