FIELD: radio engineering; microelectronics.
SUBSTANCE: device comprises an input differential cascade, a power supply bus, first and second groups of antiphase inputs of the device, first and second current outputs of the input differential cascade, first and second antiphase outputs of the device, first and second negative feedback resistors, first and second output field-effect transistors with integrated gates, current-stabilizing resistor, second current-stabilizing resistor, a first reference current source, a buffer amplifier, a second reference current source, a second buffer amplifier, a first auxiliary field-effect transistor, a third reference current source, first, second and third additional field-effect transistors, an additional current-stabilizing dipole.
EFFECT: technical result consists in creation of operational amplifier with paraphase output only on field transistors with control p-n junction, providing high radiation resistance and stable operation at cryogenic temperatures at extremely low level of noise.
1 cl, 10 dwg
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Authors
Dates
2020-06-26—Published
2020-02-06—Filed