PRECISION GALLIUM ARSENIDE OPERATIONAL AMPLIFIER WITH LOW LEVEL OF SYSTEMATIC COMPONENT OF ZERO OFFSET VOLTAGE AND HIGH GAIN Russian patent published in 2024 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: technical result is provided due to the additional introduction of the first and second field-effect transistors, the combined sources of which are connected to the bases of the output transistors of the intermediate stage, wherein the gate of the first field-effect transistor is connected to the collector of the first output transistor of the intermediate stage and the third reference current source, gate of the second field-effect transistor is connected to the collector of the second output transistor of the intermediate stage and to the fourth reference current source, drain of first field-effect transistor is connected to input of current mirror of intermediate stage, which is matched with second bus of power supply, drain of the second field-effect transistor is connected to the output of the current mirror of the intermediate stage and to the base of the auxiliary transistor, the emitter of which is connected to the second power supply bus, and the collector is connected to the input of the output buffer amplifier and the fifth reference current source.

EFFECT: reducing the level of the systematic component of the zero offset voltage and increasing the voltage gain in the precision gallium arsenide operational amplifier.

4 cl, 12 dwg, 1 tbl