GALLIUM ARSENIDE OPERATIONAL AMPLIFIER WITH HIGH GAIN AND LOW LEVEL OF SYSTEMATIC COMPONENT OF ZERO OFFSET VOLTAGE Russian patent published in 2024 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: into the gallium arsenide operational amplifier circuit are introduced first and second additional bipolar transistors, which combined emitters are connected to the gate of the additional field-effect transistor and through the additional resistor are connected to the combined bases of the output transistors of the intermediate stage, base of the first additional bipolar transistor is connected to the collector of the first output transistor of the intermediate stage and to the third reference current source, base of the second additional bipolar transistor is connected to the base of the second output transistor of the intermediate stage and to the fourth reference current source, collector of the first additional bipolar transistor is connected to the fifth reference current source and to the input of the current mirror of the intermediate stage, non-inverting output of which is connected to output of device, and the inverting output is connected to the collector of the second additional bipolar transistor, to the base of the output transistor and the sixth reference current source.

EFFECT: design of a precision operational amplifier circuit with a low level of a systematic component of zero offset voltage and high voltage gain within the combined GaAs process, which enables to use only nJFet field and p-n-p bipolar transistors.

3 cl, 5 dwg