FIELD: measuring equipment.
SUBSTANCE: invention relates to semiconductor detectors of ionizing radiation. Hybrid pixel detector of ionizing radiations comprises a semiconductor structured sensor for detecting ionizing radiations, consisting of a matrix of columnar elements electrically insulated from each other by a thin layer of dielectric material, and a recording matrix microcircuit connected by an inverted crystal method, wherein the sensor thickness is 4 mm, and the pixel size of sensor is 55 mcm or 110 mcm.
EFFECT: technical result is high efficiency of detecting radiation, high spatial and energy resolution of the detector.
1 cl, 4 dwg
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