PHOTODETECTOR (VERSIONS) AND PRODUCTION METHOD THEREOF Russian patent published in 2017 - IPC H01L31/18 H01L31/04 

FIELD: electricity.

SUBSTANCE: invention relates to semiconductor electronics, in particular to production of structures of photoelectric receiving device (PRD), intended for conversion of optical radiation of a certain spectral range into an electric signal. Method of making a photodetector (PD) by forming on a substrate a topological pattern of photosensitive elements, anode and cathode areas, creation of metallization and passivating coating and contact pads, cutting and assembling photodetector chip in a housing, to ensure resistance of photodetector to dose effects and transient processes of ionising radiation substrate material used is a silicon-on-sapphire (SOS) hetero-epitaxial structure (HES) with thickness of epitaxial silicon layer of 5 mcm, n-type conductivity with specific resistance of 4.5 ohm⋅cm to 10 ohm⋅cm and concentration of main impurities of not less than 10¹⁵ cm^-3. In photodetector, formed by electric serial, parallel or serial-parallel connection of elementary diodes, to provide resistance to transient processes from effect of pulsed ionising radiation, topological layers are formed on SOS technology HES with thickness of epitaxial silicon layer 5 mcm, n-type conductivity with specific resistance of 4.5 ohm⋅cm to 10 ohm⋅cm, with concentration of main impurities of not less than 10¹⁵ cm^-3 and applied on opposite side of HES layer of polycrystalline silicon, and structures of elementary diodes are formed in order of alternation from bottom-up topological layers: "the active region", "n-pocket", "anode", "cathode", "metal", "passivation".

EFFECT: method of producing radiation-resistant optical radiation receiver (photodetector or detector) on silicon diode structures of "silicon-on-sapphire" (SOS) technology and its implementation.

36 cl, 15 tbl, 33 dwg