SEMICONDUCTOR PIXEL DETECTOR OF CHARGED STRONGLY IONIZED PARTICLES (MULTICHARGED IONS) Russian patent published in 2018 - IPC G01T1/24 

FIELD: electrical engineering.

SUBSTANCE: use: to create a semiconductor pixel detector of highly ionizing charged particles. Summary of the invention consists in that the detector comprises a series connection of a monolithic layer of a high-resistance semiconductor material (sensor) with a solid outer and pixel internal metal electrodes and a recording pixel microcircuit with a gain of at least 80 mV/fKl, the source of the bias voltage is excluded from the detector circuit and a resistor is added which is connected to the external metal electrode of the sensor and the recording circuit.

EFFECT: providing the possibility of simplifying the design of the detector, reducing the weight and power consumption of such equipment, improving the reliability of the detector and the convenience of its operation.

1 cl, 4 dwg