IONIZING RADIATION SENSOR BASED ON SILICON OF CRUCIBLE-FREE MELTING ZONE OF P-TYPE CONDUCTIVITY Russian patent published in 2017 - IPC G01T1/24 

FIELD: metallurgy.

SUBSTANCE: ionizing radiation sensor comprises an n+-i-p+-structure, comprising an i-region in the form of high-resistance, low-alloy, single-crystal high-purity silicon substrate of the crucible-free melting zone of the p-type conductivity, on the front side of which a sensitive zone is made in the form of at least one n A region whose outer surface is provided with a successively located masking coating of silica, aluminium metallization and external passivation layer, and on the reverse side of said substrate successively formed highly made Si layer, forming a p+-region, and aluminium metallization is applied to form the substrate with said layer n+-i-p+-diode. Under the silicon dioxide coating on the front surface of the substrate around the sensitive area, at least one pair of p+-type and n+- type guard rings arranged with a gap therebetween is formed, said silicon dioxide coating being provided with windows for contacting the sensitive n+-regions with aluminium metallization, and the external passivation layer is made with windows for connection of terminals.

EFFECT: reduction of radiation background measurement time, significant reduction in sensor size and weight, expansion of the range of recorded energies, and the possibility of recording various types of ionizing radiation with a decrease in noise level and sensitivity of the sensor.

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